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SUD50P10-43 - P-Channel MOSFET

Key Features

  • D TrenchFETr Power MOSFET ID (A)a Qg (Typ) 105 nC.
  • 38 rDS(on) (W) 0.043 at VGS =.
  • 10 V RoHS.

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SUD50P10-43 New Product Vishay Siliconix P-Channel 100-V (D-S) 175 _C MOSFET PRODUCT SUMMARY VDS (V) –100 FEATURES D TrenchFETr Power MOSFET ID (A)a Qg (Typ) 105 nC –38 rDS(on) (W) 0.043 at VGS = –10 V RoHS COMPLIANT TO-252 S G Drain Connected to Tab G D S D P-Channel MOSFET Top View Ordering Information: SUD50P10-43–E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 _C Continuous Drain Current (TJ = 175 _C) TC = 70 _C TA = 25 _C TA = 70 _C Pulsed Drain Current Source Drain Diode Current Continuous Source-Drain Avalanche Current Single-Pulse Avalanche Energy L=0 0.