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SUD50P10-43L
Vishay Siliconix
P-Channel 100-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) - 100 RDS(on) (Ω) 0.043 at VGS = - 10 V 0.048 at VGS = - 4.5 V ID (A)a - 37 - 35 Qg (Typ.) 54 nC
FEATURES
• TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC
RoHS
COMPLIANT
TO-252
S
G Drain Connected to Tab G D S D P-Channel MOSFET
Top View Ordering Information: SUD50P10-43L-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 175 °C)b TC = 125 °C TA = 25 °C TA = 125 °C Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.
SUD50P10-43L Datasheet
