The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SUD50P10-43L-GE3
Vishay Siliconix
P-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 100
RDS(on) () 0.043 at VGS = - 10 V 0.048 at VGS = - 4.5 V
ID (A) - 37 - 35
Qg (Typ.) 54 nC
TO-252
FEATURES • TrenchFET® Power MOSFET • Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
S
GDS Top View
Drain Connected to Tab
Ordering Information: SUD50P10-43L-GE3 (Lead (Pb)-free and Halogen-free)
G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
- 100
V
VGS
± 20
TC = 25 °C
- 36.4
Continuous Drain Current (TJ = 150 °C)b
TC = 70 °C TA = 25 °C
ID
- 29.1 - 9b, c
Pulsed Drain Current
TA = 70 °C
- 7.
SUD50P10-43L-GE3 Datasheet
