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Vishay Intertechnology Electronic Components Datasheet

SUD50P10-43L Datasheet

P-Channel MOSFET

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SUD50P10-43L
Vishay Siliconix
P-Channel 100-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 100
0.043 at VGS = - 10 V
0.048 at VGS = - 4.5 V
ID (A)a
- 37
- 35
Qg (Typ.)
54 nC
TO-252
FEATURES
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
RoHS
COMPLIANT
S
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50P10-43L-E3 (Lead (Pb)-free)
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)b
TC = 125 °C
TA = 25 °C
ID
TA = 125 °C
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)
TC = 25 °C
TA = 25 °C
IS
Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
- 100
± 20
- 37.1a
- 31a
- 9.2b, c
- 7.7b, c
- 40
- 50a
- 6.9b, c
- 35
61
136
95
8.3b, c
5.8b, c
- 55 to 175
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambienta
Junction-to-Case (Drain)
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 40 °C/W.
Document Number: 73444
S09-1398-Rev. C, 20-Jul-09
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
15
40
0.85
Maximum
18
50
1.1
Unit
°C/W
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Vishay Intertechnology Electronic Components Datasheet

SUD50P10-43L Datasheet

P-Channel MOSFET

No Preview Available !

SUD50P10-43L
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = - 100 V, VGS = 0 V
VDS = - 100 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = - 10 V
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VGS = - 10 V, ID = - 9.2 A
VGS = - 4.5 V, ID = - 7.7 A
VDS = - 15 V, ID = - 9.2 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 50 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = - 50 V, VGS = - 10 V, ID = - 9.2 A
Gate-Source Charge
Gate-Drain Charge
Qgs VDS = - 50 V, VGS = - 4.5 V, ID = - 9.2 A
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 50 V, RL = 6.5 Ω
ID - 7.7 A, VGEN = - 10 V, Rg = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 50 V, RL = 6.5 Ω
ID - 7.7 A, VGEN = - 4.5 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
IS
ISM
TC = 25 °C
Body Diode Voltage
VSD IS = - 7.7 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = - 7.7 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 100
-1
- 40
Typ.
- 109
5.9
0.036
0.040
38
4600
230
175
106
54
14
26
4
15
20
110
100
42
160
100
100
- 0.8
60
150
46
14
Max. Unit
V
mV/°C
-3
± 100
-1
- 10
0.043
0.048
V
nA
µA
A
Ω
S
pF
160
81
nC
25
30
165
150
65
240
150
150
- 50
- 40
- 1.2
90
225
Ω
ns
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73444
S09-1398-Rev. C, 20-Jul-09
http://www.Datasheet4U.com


Part Number SUD50P10-43L
Description P-Channel MOSFET
Maker Vishay
Total Page 9 Pages
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