SUD50P10-43L Datasheet | Vishay

FEATURES - Trench FET® Power MOSFET - pliant to Ro HS Directive 2002/95/EC Ro HS PLIANT TO-252 G Drain Connected to Tab G D S D P-Channel MOSFET Top View Ordering Information: SUD50P10-43L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 175 °C)b TC = 125 °C TA = 25 °C TA = 125 °C Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 m H TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS IAS EAS ID Symbol VDS VGS Limit - 100 ± 20 - 37.1a - 31a - 9.2b, c - 7.7b, c - 40 - 50a - 6.9b, c - 35 61 136 95 8.3b, c 5.8b, c - 55 to 175 °C W m J A Unit V THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta Junction-to-Case (Drain) Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 40 °C/W. Document Number: 73444 S09-1398-Rev. C, 20-Jul-09 t ≤ 10 s Steady State Symbol Rth JA Rth JC Typical 15 40 0.85 Maximum 18 50 1.1 Unit °C/W .vishay. 1 http://.. Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic b Symbol VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb Test Conditions VGS = 0 V, ID = - 250 µA ID = - 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 20 V VDS = - 100 V, VGS = 0 V VDS = - 100 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = - 10 V VGS = - 10 V, ID = - 9.2 A VGS = - 4.5 V, ID =...