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N-Channel 40 V (D-S) MOSFET
Si2356DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.051 at VGS = 10 V
40
0.054 at VGS = 4.5 V
0.070 at VGS = 2.5 V
TO-236 (SOT-23)
ID (A)a 4.3 4.1 3.6
Qg (Typ.) 3.8 nC
G1 S2
3D
FEATURES • TrenchFET® Power MOSFET
• 100 % Rg Tested • Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
• DC/DC Converter • Load Switch • LED Backlighting • Power Management
D G
Top View Si2356DS (E9)* * Marking Code
Ordering Information: Si2356DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
± 12
TC = 25 °C
4.
Si2356DS Datasheet
