SI2356DS
SI2356DS is N-Channel MOSFET manufactured by Kexin Semiconductor.
Features
- VDS (V) = 40V
- ID = 4.3 A (VGS = 10V)
- RDS(ON) ＜ 51mΩ (VGS = 10V)
- RDS(ON) ＜ 54mΩ (VGS = 4.5V)
- RDS(ON) ＜ 70mΩ (VGS = 2.5V)
+0.2 2.8 -0.1
SOT-23-3
2.9 +0.2 -0.1
0.4 +0.1 -0.1
0.95 +0.1 -0.1 1.9 +0.1 -0.2
0-0.1 +0.1 0.68
-0.1
+0.2 1.6 -0.1
+0.2 1.1 -0.1
Unit: mm
0.15 +0.02 -0.02
1. Gate 2. Source 3. Drain
- Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Tc=25℃
Continuous Drain Current
(TJ = 150℃)
Tc=70℃ Ta=25℃
Pulsed Drain Current (t=100us)
Ta=70℃
Power Dissipation
Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Foot Junction Temperature Storage Temperature Range
Tc=25℃ Tc=70℃ Ta=25℃ Ta=70℃ t≤5 s
Symbol VDS...
