Si2356DS
Si2356DS is N-Channel MOSFET manufactured by Vishay.
FEATURES
- Trench FET® Power MOSFET
- 100 % Rg Tested
- Material categorization:
For definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- DC/DC Converter
- Load Switch
- LED Backlighting
- Power Management
Top View Si2356DS (E9)-
- Marking Code
Ordering Information: Si2356DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
± 12
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
3.4 3.2 a,b
TA = 70 °C
2.6 a,b
Pulsed Drain Current (t = 100 µs)
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
1.4 0.8 a,b
TC = 25...
