900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Vishay Intertechnology Electronic Components Datasheet

Si3459DV Datasheet

P-Channel 60-V (D-S) MOSFET

No Preview Available !

P-Channel 60-V (D-S) MOSFET
Si3459DV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 60 0.220 at VGS = - 10 V
0.310 at VGS = - 4.5 V
ID (A)
± 2.2
± 1.9
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
3 mm
TSOP-6
Top View
16
25
34
(4) S
(3) G
2.85 mm
Ordering Information: Si3459DV-T1-E3 (Lead (Pb)-free)
Si3459DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a, b
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
ID
IDM
Single Avalanche Current (L = 0.1 mH)
IAS
Maximum Power Dissipationb
Operating Junction and Storage Temperature Range
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
Limit
- 60
± 20
± 2.2
± 1.7
± 10
-7
2
1.3
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Lead
t5s
Steady State
Steady State
Notes:
a. Surface Mounted on FR4 board.
b. t 5 s.
Symbol
RthJA
RthJL
Typical
106
35
Maximum
62.5
Unit
V
A
W
°C
Unit
°C/W
Document Number: 70877
S09-0765-Rev. D, 04-May-09
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

Si3459DV Datasheet

P-Channel 60-V (D-S) MOSFET

No Preview Available !

Si3459DV
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Source-Drain Rating Characteristicsb
Continuous Current
Pulsed Current
Diode Forward Voltagea
Source-Drain Reverse Recovery Time
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
VGS = 0 V, ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = - 60 V, VGS = 0 V
VDS = - 60 V, VGS = 0 V, TJ = 150 °C
VDS = - 5 V, VGS = - 10 V
VGS = - 10 V, ID = - 2.2 A
VGS = - 4.5 V, ID = - 1.9 A
VDS = - 4.5 V, ID = - 2.2 A
VDS = - 30 V, VGS = - 10 V, ID = - 2.2 A
VDD = - 30 V, RL = 30 Ω
ID - 1 A, VGEN = - 10 V, Rg = 6 Ω
IS = - 1.7 A, VGS = 0 V
IF = - 1.7 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 60
-1
- 10
Typ.
0.190
0.265
4
7
1.6
1.2
8
12
23
12
- 0.8
50
Max.
± 100
-1
- 50
0.220
0.310
14
16
24
45
25
- 1.7
- 10
- 1.2
90
Unit
V
nA
µA
A
Ω
S
nC
ns
A
V
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70877
S09-0765-Rev. D, 04-May-09


Part Number Si3459DV
Description P-Channel 60-V (D-S) MOSFET
Maker Vishay
PDF Download

Si3459DV Datasheet PDF





Similar Datasheet

1 Si3459DV P-Channel 60-V (D-S) MOSFET
Vishay





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy