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P-Channel 60-V (D-S) MOSFET
Si3459DV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 60 0.220 at VGS = - 10 V 0.310 at VGS = - 4.5 V
ID (A) ± 2.2 ± 1.9
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC
3 mm
TSOP-6 Top View
16
25
34
(4) S (3) G
2.85 mm
Ordering Information: Si3459DV-T1-E3 (Lead (Pb)-free) Si3459DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
(1, 2, 5, 6) D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a, b Pulsed Drain Current
TC = 25 °C TC = 70 °C
ID IDM
Single Avalanche Current (L = 0.