The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Si3457BDV
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
−30
rDS(on) (W)
0.054 @ VGS = −10 V 0.100 @ VGS = −4.5 V
ID (A)
−5.0 −3.7
TSOP-6 Top View
1 3 mm 6 5 (4) S
2
(3) G
3
4
2.85 mm
(1, 2, 5, 6) D P-Channel MOSFET
Ordering Information: Si3457BDV-T1 Si3457BDV-T1—E3 (Lead Free) Marking Code: 7Bxxx
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
5 secs
Steady State
−30 "20
Unit
V
−5.0 −4.0 −20 −1.7 2.0 1.3 −55 to 150
−3.7 −3.0 A
−0.
SI3457BDV Datasheet
