Si3459DV - P-Channel MOSFET

Vishay

Key Features

Halogen-free According to IEC 61249-2-21 Definition.
TrenchFET® Power MOSFET.
Compliant to RoHS Directive 2002/95/EC 3 mm TSOP-6 Top View 16 25 34 (4) S (3) G 2.85 mm Ordering Information: Si3459DV-T1-E3 (Lead (Pb)-free) Si3459DV-T1-GE3 (Lead (Pb)-free and Halogen-free) (1, 2, 5, 6) D P-Channel MOSFET.

Si3459DV p-channel mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	Si3459DV
Manufacturer	Vishay
File Size	82.10 KB
Description	P-Channel MOSFET
Datasheet	Si3459DV Datasheet

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P-Channel 60-V (D-S) MOSFET Si3459DV Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.220 at VGS = - 10 V 0.310 at VGS = - 4.5 V ID (A) ± 2.2 ± 1.9 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC 3 mm TSOP-6 Top View 16 25 34 (4) S (3) G 2.85 mm Ordering Information: Si3459DV-T1-E3 (Lead (Pb)-free) Si3459DV-T1-GE3 (Lead (Pb)-free and Halogen-free) (1, 2, 5, 6) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a, b Pulsed Drain Current TC = 25 °C TC = 70 °C ID IDM Single Avalanche Current (L = 0.