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Vishay Intertechnology Electronic Components Datasheet

Si4398DY Datasheet

Fast Switching MOSFET

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Si4398DY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
20
RDS(on) (Ω)
0.0028 at VGS = 10 V
0.0040 at VGS = 4.5 V
ID (A)
25
22
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Extremely Low Qgd for Switching Losses
• Ultra-Low On-Resistance
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Synchronous Rectifier in Low Power DC/DC Converters
• POL
• OR-ing
D
G
Ordering Information: Si4398DY-T1-E3 (Lead (Pb)-free)
Si4398DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
10 s Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)a
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25 °C
TA = 70 °C
L = 0.1 mH
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
20
± 20
25 19
20 13
70
2.9 1.3
40
80
3.5 1.6
2.2 1.0
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1” x 1” FR4 board.
t 10 s
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
29
67
13
Maximum
35
80
16
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 73018
S11-0209-Rev. C, 14-Feb-11
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

Si4398DY Datasheet

Fast Switching MOSFET

No Preview Available !

Si4398DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VSD
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 12 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 25 A
VGS = 4.5 V, ID = 22 A
VDS = 10 V, ID = 15 A
IS = 2.9 A, VGS = 0 V
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = 10 V, VGS = 4.5 V, ID = 20 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 10 V, RL = 10 Ω
ID 1 A, VGEN = 4.5 V, Rg = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = 2.9 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
1.0
50
0.7
Typ.
Max.
3.0
± 100
1
5
0.0023
0.0033
95
0.72
0.0028
0.0040
1.1
5620
1340
540
34
17.5
7.5
1.4
23
15
80
23
50
50
2.1
35
23
120
35
80
Unit
V
nA
µA
A
Ω
S
V
pF
nC
Ω
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
60
VGS = 10 V thru 4 V
50
60
50
40 40
30 30
20
10
0
012345
VDS - Drain-to-Source Voltage (V)
Output Characteristics
20
TC = 125 °C
10
25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
www.vishay.com
2
Document Number: 73018
S11-0209-Rev. C, 14-Feb-11


Part Number Si4398DY
Description Fast Switching MOSFET
Maker Vishay
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