Si4394DY Datasheet | Vishay

FEATURES - Extremely Low Qgd for Switching Losses - Trench FET® Power MOSFET - 100 % Rg Tested Ro HS PLIANT APPLICATIONS - High-Side DC/DC Conversion - Notebook - Server - Synchronous Rectification SO-8 D S S S G 1 2 3 4 Top View S Ordering Information: Si4394DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction)a Avalanch Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 m H TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS PD TJ, Tstg 2.7 1.9 - 55 to 150 2.7 45 1.4 0.9 W °C 15 12 50 1.3 10 s 30 ± 12 10 8 A Steady State Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol t ≤ 10 s Steady State Steady State Rth JA Rth JF Typical 32 68 16 Maximum 42 90 20 Unit °C/W Maximum Junction-to-Foot (Drain) Notes: a. Surface mounted on 1” x 1” FR4 board. Document Number: 72713 S11-0209-Rev. C, 14-Feb-11 .vishay. 1 Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.9 A, d I/dt = 100 A/µs VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω f = 1 MHz 0.8 VDS = 15 V, VGS = 4.5 V, ID = 15 A VDS = 15 V, VGS = 0 V, f = 1 MHz 1900 530 120 12.5 3.9 2.1 1.2 13 8 48 13 36 1.8 20 13 75 20 55 ns Ω n C p F VGS(th) IGSS IDSS ID(on)...