Si4398DY Datasheet | Vishay

FEATURES - Halogen-free According to IEC 61249-2-21 Definition - Extremely Low Qgd for Switching Losses - Ultra-Low On-Resistance - 100 % Rg and UIS Tested - pliant to Ro HS Directive 2002/95/EC APPLICATIONS - Synchronous Rectifier in Low Power DC/DC Converters - POL - OR-ing Ordering Information: Si4398DY-T1-E3 (Lead (Pb)-free) Si4398DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 10 s Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction)a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C L = 0.1 m H TA = 25 °C TA = 70 °C VDS VGS IDM IS IAS EAS TJ, Tstg 20 ± 20 25 19 20 13 70 2.9 1.3 40 80 3.5 1.6 2.2 1.0 - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface mounted on 1” x 1” FR4 board. t ≤ 10 s Steady State Steady State Symbol Rth JA Rth JF Typical 29 67 13 Maximum 35 80 16 Unit...