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Vishay Intertechnology Electronic Components Datasheet

Si4554DY Datasheet

N- and P-Channel 40 V (D-S) MOSFET

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Si4554DY
Vishay Siliconix
N- and P-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.024 at VGS = 10 V
N-Channel 40
0.026 at VGS = 8 V
0.027 at VGS = 4.5 V
0.027 at VGS = - 10 V
P-Channel - 40 0.028 at VGS = - 8 V
0.034 at VGS = - 4.5 V
ID (A)a Qg (Typ.)
8e
8e 6.5
8
- 8e
- 8e 21.7
- 7.5
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Motor Drive
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
D1
G1
S2
G2
Top View
Ordering Information:
Si4554DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1 D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
VDS
VGS
ID
IDM
IS
ISM
IAS
EAS
PD
40
± 20
8e
6.8
6.8b, c
5.4b, c
40
2.6
1.6b, c
40
10
5
3.1
2
2b, c
- 40
± 20
- 8e
- 6.8
- 6.6b, c
- 5.3b, c
- 40
- 2.6
- 1.6b, c
- 40
- 20
20
3.2
2.1
2b, c
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
1.28b, c
1.28b, c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
Symbol
Typ. Max.
Maximum Junction-to-Ambientb, d
t 10 s
RthJA
50 62.5
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
30 40
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W (n-channel) and 110 °C/W (p-channel).
e. Package limited.
P-Channel
Typ. Max.
47 62.5
29 38
Unit
°C/W
Document Number: 63660
www.vishay.com
S11-2527-Rev. A, 26-Dec-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

Si4554DY Datasheet

N- and P-Channel 40 V (D-S) MOSFET

No Preview Available !

Si4554DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = - 250 µA
ID = 250 µA
ID = - 250 µA
ID = 250 µA
ID = - 250 µA
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 0 V, VGS = ± 20 V
VDS = 40 V, VGS = 0 V
VDS = - 40 V, VGS = 0 V
VDS = 40 V, VGS = 0 V, TJ = 55 °C
VDS = - 40 V, VGS = 0 V, TJ = 55 °C
VDS = 5 V, VGS = 10 V
VDS = - 5 V, VGS = - 10 V
VGS = 10 V, ID = 6.8 A
VGS = - 10 V, ID = - 8 A
VGS = 8 V, ID = 6.7 A
VGS = - 8 V, ID = - 6.5 A
VGS = 4.5 V, ID = 6.6 A
VGS = - 4.5 V, ID = - 5 A
VDS = 15 V, ID = 6.8 A
VDS = - 15 V, ID = - 6.7 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
N-Channel
VDS = 20 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 20 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 20 V, VGS = 10 V, ID = 10 A
Qg VDS = - 20 V, VGS = - 10 V, ID = - 10 A
N-Channel
VDS = 20 V, VGS = 4.5 V, ID = 10 A
Qgs
P-Channel
Qgd VDS = - 20 V, VGS = - 4.5 V, ID = - 10 A
Gate Resistance
Rg f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
40
- 40
1
- 1.2
20
- 20
0.3
1.3
Typ.a Max. Unit
V
40
- 34
- 4.1
5
mV/°C
2.2
- 2.5
± 100
± 100
1
-1
10
- 10
V
nA
µA
A
0.020
0.021
0.021
0.022
0.022
0.027
27
25
0.024
0.027
0.026
0.028
0.027
0.034
Ω
S
690
2000
115
240
41
202
13.3
41.5
6.5
21.7
2.3
5.6
1.7
9.8
1.3
6.4
20
63
10
33
2.6
12.8
pF
nC
Ω
www.vishay.com
Document Number: 63660
2 S11-2527-Rev. A, 26-Dec-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number Si4554DY
Description N- and P-Channel 40 V (D-S) MOSFET
Maker Vishay
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