Si4800BDY Description
Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0185 at VGS = 10 V 0.030 at VGS = 4.5 V ID (A) 9.
Si4800BDY Key Features
- Halogen-free According to IEC 61249-2-21 Available
- TrenchFET® Power MOSFET
- High-Efficient PWM Optimized
- 100 % UIS and Rg Tested