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Si4872DY
New Product
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.0075 @ VGS = 10 V 0.010 @ VGS = 4.5 V
ID (A)
15 13
D D
D D
SO-8
S S S G 1 2 3 4 Top View 8 7 6 5 D D D D N-Channel MOSFET G
S
S
S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
30 "20 15 13 50 2.7 3.10 2
Steady State
Unit
V
11.0 9.0 A
1.40 1.56 1.
Si4872DY Datasheet
