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Vishay Intertechnology Electronic Components Datasheet

Si5481DU Datasheet

P-Channel 20-V (D-S) MOSFET

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New Product
P-Channel 20-V (D-S) MOSFET
Si5481DU
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.022 at VGS = - 4.5 V
- 20 0.029 at VGS = - 2.5 V
0.041 at VGS = - 1.8 V
ID (A)
- 12a
- 12a
- 12a
PowerPAK ChipFET Single
1
2
D3
DD
4
8D
7D
6S
D
G
S
5
Qg (Typ.)
20 nC
FEATURES
Halogen-free
• TrenchFET® Power MOSFET
• New thermally Enhanced PowerPAK®
ChipFET® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
RoHS
COMPLIANT
APPLICATIONS
Load Switch, Battery Switch, PA Switch and Charger
Switch for Portable Devices S
Marking Code
BC XXX
Lot Traceability
and Date Code
Part #
Code
G
Bottom View
Ordering Information: Si5481DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TA = 70 °C
TJ, Tstg
D
P-Channel MOSFET
Limit
- 20
±8
- 12a
- 12a
- 9.7b, c
- 7.8b, c
- 20
- 14.8
- 2.6b, c
17.8
11.4
3.1b, c
2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
Symbol
RthJA
RthJC
Typical
30
5.5
Maximum
40
7
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 90 °C/W.
Document Number: 73777
S-81448-Rev. C, 23-Jun-08
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

Si5481DU Datasheet

P-Channel 20-V (D-S) MOSFET

No Preview Available !

Si5481DU
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 8 V
VDS = - 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 6.5 A
VGS = - 2.5 V, ID = - 5.7 A
VGS = - 1.8 V, ID = 2.4 A
VDS = - 10 V, ID = - 6.5 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
Qg
VDS = - 10 V, VGS = 0 V, f = 1 MHz
VDS = - 10 V, VGS = - 8 V, ID = - 9.7 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off DelayTime
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off DelayTime
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Currenta
IS
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
Reverse Recovery Rise Time
tb
VDS = - 10 V, VGS = - 4.5 V, ID = - 9.7 A
f = 1 MHz
VDD = - 10 V, RL = 1.3 Ω
ID - 7.8 A, VGEN = - 4.5 V, Rg = 1 Ω
VDD = - 10 V, RL = 1.3 Ω
ID - 7.8 A, VGEN = - 8 V, Rg = 1 Ω
TC = 25 °C
IS = - 7.8 A, VGS = 0 V
IF = - 7.8 A, dI/dt = 100 A/µs, TJ = 25 °C
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 20
- 0.4
20
Typ.
- 15.5
2.5
0.018
0.024
0.033
25
1610
300
200
33
20
2.8
5.1
8
13
50
90
167
6
25
90
167
- 0.8
30
17
14
16
Max.
-1
± 100
-1
- 10
0.022
0.029
0.041
50
30
20
75
135
250
15
40
135
250
- 14.8
20
- 1.2
60
30
Unit
V
mV/°C
V
nA
µA
A
Ω
S
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73777
S-81448-Rev. C, 23-Jun-08


Part Number Si5481DU
Description P-Channel 20-V (D-S) MOSFET
Maker Vishay
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