Si7111EDN Key Features
- TrenchFET® Gen III p-channel power MOSFET
- RDS(on) rating at VGS = -2.5 V
- 100 % Rg and UIS tested
- Typical ESD protection: 4600 V HBM
- Material categorization: for definitions of pliance please see .vishay./doc?99912
- Part: Si7111EDN
- Manufacturer: Vishay
- Size: 143.87 KB
Related Vishay Datasheets
| Part Number | Description |
|---|---|
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| SI7112DN | N-Channel 30 V (D-S) Fast Switching MOSFET |
| Si7116BDN | N-Channel MOSFET |
| Si7121DN | P-Channel MOSFET |
| Si7129DN | 30V P-Channel MOSFET |