* TrenchFET® Gen III p-channel power MOSFET
* RDS(on) rating at VGS = -2.5 V
* 100 % Rg and UIS tested
* Typical ESD protection: 4600 V HBM
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
* Ba
Si7111EDN Datasheet (143.87 KB)
Si7111EDN
143.87 KB
P-channel 30 v (d-s) mosfet.
www.vishay.com Si7111EDN Vishay Siliconix P-Channel 30 V (D-S) MOSFET PowerPAK® 1212-8 Single D D8 D7 D6 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUM.
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