Si7129DN Description
() at VGS = -10 V RDS(on) max. () at VGS = -4.5 V Qg typ. (nC) ID (A) e, f Configuration 1 2S 3S 4S G Bottom View -30 0.0114 0.0200 24.6 -35 Single.
Si7129DN Key Features
- TrenchFET® power MOSFET
- Low thermal resistance PowerPAK® package
- 100 % Rg and UIS tested
- Material categorization: