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SI7129DN - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-30V.
  • ID =-35 A (VGS =-10V).
  • RDS(ON) ＜ 11.4mΩ (VGS =-10V).
  • RDS(ON) ＜ 20mΩ (VGS =-4.5V) S G D 1212-8 (DFN) 3.30 mm D 8 D 7 D 6 D 5 S 1 S 3.30 mm 2 S 3 G 4 Bottom View.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current Single-Pulse Avalanche Energy Power Dissipation Thermal Resistance. Junction- to-Ambient Thermal Resistance. Junction- to-.

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SMD Type P-Channel MOSFET SI7129DN (KI7129DN) MOSFET ■ Features ● VDS (V) =-30V ● ID =-35 A (VGS =-10V) ● RDS(ON) ＜ 11.4mΩ (VGS =-10V) ● RDS(ON) ＜ 20mΩ (VGS =-4.5V) S G D 1212-8 (DFN) 3.30 mm D 8 D 7 D 6 D 5 S 1 S 3.30 mm 2 S 3 G 4 Bottom View ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current Single-Pulse Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Junction Storage Temperature Range TC=25℃ TC=70℃ Ta=25℃ (Note.1 and 2) Ta=70℃ (Note.1 and 2) L=0.1mH TC=25℃ TC=70℃ Ta=25℃ (Note.1 and 2) Ta=70℃ (Note.1 and 2) t≤10s (Note.