Si7252ADP
Si7252ADP is Dual N-Channel MOSFET manufactured by Vishay.
FEATURES
- Trench FET® power MOSFET
- PWM optimized
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- System power DC/DC
D1
D2
G1
G2
N-Channel MOSFET S1
N-Channel MOSFET S2
Power PAK SO-8 Si7252ADP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current (TJ = 150 °C)
Pulsed drain current Source-drain current diode current
Maximum power dissipation
Operating junction and storage temperature range Soldering remendations (peak temperature) d, e
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
VDS VGS ID IDM IS
PD TJ, Tstg
LIMIT 100 ± 20 28.7 a 23 a 9.3 a 7.4 a 70 30.7
3.3 b, c 33.8 21.6 3.6 b, c 2.3 b, c -55 to +150 260
UNIT V
W °C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum junction-to-ambient b, f Maximum junction-to-case (drain) t 10 s Steady state
Rth JA Rth...
