SiHB20N50E Description
SiHB20N50E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 92 10 19 Single 0.184 D2PAK (TO-263) D GD S G S N-Channel MOSFET.
SiHB20N50E Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance