SiHB22N65E Description
SiHB22N65E Vishay Siliconix E Series Power MOSFET D D2PAK (TO-263) GD S PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V Qg typ. (nC) ID (A) Configuration G S N-Channel MOSFET 700 0.18 32 22 Single.
SiHB22N65E Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)