SiHB20N50E - E Series Power MOSFET

Vishay

Key Features

Low figure-of-merit (FOM) Ron x Qg.
Low input capacitance (Ciss).
Reduced switching and conduction losses.
Low gate charge (Qg).
Avalanche energy rated (UIS).
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

SiHB20N50E e series power mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SiHB20N50E
Manufacturer	Vishay
File Size	143.79 KB
Description	E Series Power MOSFET
Datasheet	SiHB20N50E Datasheet

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www.vishay.com SiHB20N50E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 92 10 19 Single 0.184 D2PAK (TO-263) D GD S G S N-Channel MOSFET FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.