* Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness - Avalanche energy rated (UIS)
* Optimal efficiency and operation - Low cost - Simple gate drive circuitry - Low figure-of-merit (FOM):
SiHF8N50D Datasheet (172.56 KB)
SiHF8N50D
172.56 KB
Power mosfet.
www.vishay.com SiHF8N50D Vishay Siliconix D Series Power MOSFET D TO-220 FULLPAK G GDS S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. R.
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