SiHF830S Datasheet | Vishay

FEATURES - Surface mount - Available in tape and reel - Dynamic d V/dt rating - Repetitive avalanche rated Available - Fast switching - Ease of paralleling Available - Simple drive requirements - Material categorization: for definitions of pliance please see .vishay./doc?99912 Note - This datasheet provides information about parts that are Ro HS-pliant and / or parts that are non-Ro HS-pliant. For example, parts with lead (Pb) terminations are not Ro HS-pliant. Please see the information / tables in this datasheet for details. DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of acmodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (Pb)-free Note a. See device orientation. D2PAK (TO-263) Si HF830S-GE3 IRF830SPb F D2PAK (TO-263) Si HF830STRL-GE3 a IRF830STRLPb F a I2PAK (TO-262) Si HF830L-GE3 IRF830LPb F ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a VGS at 10 V TC = 25 °C TC = 100 °C Linear Derating Factor Linear Derating Factor (PCB mount) e Single Pulse Avalanche Energy b Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Maximum Power Dissipation (PCB mount) e Peak Diode Recovery d V/dt c TC = 25 °C TA = 25 °C Operating Junction and Storage Temperature Range Soldering Remendations (Peak temperature) d for 10...