SiHF830AS Datasheet | Vishay

FEATURES - Low gate charge Qg results in simple drive requirement - Improved gate, avalanche and dynamic d V/dt ruggedness Available - Fully characterized capacitance and avalanche voltage and current Available - Effective Coss specified - Material categorization: for definitions of pliance please see .vishay./doc?99912 Note - This datasheet provides information about parts that are Ro HS-pliant and / or parts that are non Ro HS-pliant. For example, parts with lead (Pb) terminations are not Ro HS-pliant. Please see the information / tables in this datasheet for details APPLICATIONS - Switch mode power supply (SMPS) - Uninterruptible power supply - High speed power switching TYPICAL SMPS TOPOLOGIES - Two transistor forward - Half bridge and full bridge D2PAK (TO-263) Si HF830ASTRL-GE3 a IRF830ASTRLPb F a I2PAK (TO-262) Si HF830AL-GE3 a IRF830ALPb F ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a, e Linear Derating Factor Single Pulse Avalanche Energy b, e Avalanche Currenta Repetiitive Avalanche Energy a Maximum Power Dissipation Peak Diode Recovery d V/dtc, e VGS at 10 V TC = 25 °C TC = 100 °C TA = 25 °C TC = 25 °C VDS VGS ID IDM EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak temperature) d for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Starting TJ = 25 °C, L = 18 m H, Rg = 25 Ω, IAS = 5.0 A (see fig. 12) c. ISD ≤ 5.0 A, d I/dt ≤ 370 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case e. Uses Si HF830A data and test conditions LIMIT 500 ± 30 5.0 3.2 20 0.59 230 5.0 7.4 3.1 74 5.3 -55 to +150 300 UNIT...