SiHF830A Datasheet | Vishay

FEATURES - Low Gate Charge Qg Results in Simple Drive Requirement - Improved Gate, Avalanche and Dynamic d V/dt Ruggedness Available Ro HS- PLIANT - Fully Characterized Capacitance and Avalanche Voltage and Current - Effective Coss Specified - pliant to Ro HS Directive 2002/95/EC APPLICATIONS - Switch Mode Power Supply (SMPS) - Uninterruptable Power Supply - High Speed power Switching TYPICAL SMPS TOPOLOGIES - Two Transistor Forward - Half Bridge - Full Bridge TO-220AB IRF830APb F Si HF830A-E3 IRF830A Si HF830A ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc TC = 25 °C EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 18 m H, Rg = 25 Ω, IAS = 5.0 A (see fig. 12). c. ISD ≤ 5.0 A, d I/dt ≤ 370 A/μs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. LIMIT 500 ± 30 5.0 3.2 20 0.59 230 5.0 7.4 74 5.3 - 55 to + 150 300d 10 1.1 UNIT...