SiHF830 Datasheet | Vishay

FEATURES - Dynamic d V/dt Rating - Repetitive Avalanche Rated - Fast Switching - Ease of Paralleling - Simple Drive Requirements - pliant to Ro HS Directive 2002/95/EC Available Ro HS- PLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all mercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRF830Pb F Si HF830-E3 IRF830 Si HF830 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc TC = 25 °C EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 24 m H, Rg = 25 , IAS = 4.5 A (see fig. 12). c. ISD  4.5 A, d I/dt  75 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. LIMIT 500 ± 20 4.5 2.9 18 0.59 280 4.5 7.4 74 3.5 - 55 to + 150 300d 10 1.1 UNIT V W/°C m J A m J W V/ns °C lbf - in N- m - Pb containing terminations are not Ro HS pliant, exemptions may apply Document Number: 91063 S11-0506-Rev. B,...