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Vishay Intertechnology Electronic Components Datasheet

SiHFPG30 Datasheet

Power MOSFET

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Power MOSFET
IRFPG30, SiHFPG30
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
1000
VGS = 10 V
80
10
42
Single
TO-247
5.0
D
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole. It also provides greater creepage distance between
pins to meet the requirements of most safety specifications.
TO-247
IRFPG30PbF
SiHFPG30-E3
IRFPG30
SiHFPG30
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 35 mH, RG = 25 Ω, IAS = 3.1 A (see fig. 12).
c. ISD 3.1 A, dI/dt 80 A/µs, VDD 600, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
1000
± 20
3.1
2.0
12
1.0
180
3.1
13
125
1.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Document Number: 91252
S-81394-Rev. A, 21-Jul-08
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SiHFPG30 Datasheet

Power MOSFET

No Preview Available !

IRFPG30, SiHFPG30
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.24
-
MAX.
40
-
1.0
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 1000 V, VGS = 0 V
VDS = 800 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 1.9 Ab
VDS = 50 V, ID = 1.9 Ab
1000
-
2.0
-
-
-
-
2.4
- -V
1.4 - V/°C
- 4.0 V
- ± 100 nA
- 100
µA
- 500
- 5.0 Ω
- -S
Input Capacitance
Ciss
VGS = 0 V,
- 980 -
Output Capacitance
Coss
VDS = 25 V,
- 140 - pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz, see fig. 5
- 50 -
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg - - 80
ID = 3.1 A, VDS = 400 V
Qgs
VGS = 10 V
see fig. 6 and 13b
-
- 10 nC
Qgd - - 42
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
- 12 -
VDD = 500 V, ID = 3.1 A,
- 24 -
ns
RG = 12 Ω, RD = 170 Ω, see fig. 10b - 89 -
- 29 -
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS die contact
S
- 5.0 -
nH
- 13 -
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
integral reverse
ISM p - n junction diode
D
G
S
- - 3.1
A
- - 12
Body Diode Voltage
VSD TJ = 25 °C, IS = 3.1 A, VGS = 0 Vb - - 1.8 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = 3.1 A, dI/dt = 100 A/µsb
-
410 620 ns
Qrr - 1.3 2.0 µC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91252
S-81394-Rev. A, 21-Jul-08


Part Number SiHFPG30
Description Power MOSFET
Maker Vishay
Total Page 8 Pages
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