SiHFPG50 Datasheet | Vishay

Power MOSFET IRFPG50, Si HFPG50 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (n C) Qgs (n C) Qgd (n C) Configuration 1000 VGS = 10 V 190 23 110 Single TO-247AC S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Sn Pb Features - Dynamic d V/dt Rating - Repetitive Avalanche Rated - Isolated Central Mounting Hole - Fast Switching - Ease of Paralleling - Simple Drive Requirements - pliant to Ro HS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for mercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. TO-247AC IRFPG50Pb F Si HFPG50-E3 IRFPG50 Si...