SiHFPG30 Datasheet | Vishay

Power MOSFET IRFPG30, Si HFPG30 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (n C) Qgs (n C) Qgd (n C) Configuration 1000 VGS = 10 V 80 10 42 Single TO-247 5.0 D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Sn Pb Features - Dynamic d V/dt Rating - Repetitive Avalanche Rated - Isolated Central Mounting Hole - Fast Switching - Ease of Paralleling - Simple Drive Requirements - Lead (Pb)-free Available Ro HS- PLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for mercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. TO-247 IRFPG30Pb F Si HFPG30-E3 IRFPG30 Si...