900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Vishay Intertechnology Electronic Components Datasheet

SiHFPG40 Datasheet

Power MOSFET

No Preview Available !

Power MOSFET
IRFPG40, SiHFPG40
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
1000
VGS = 10 V
120
16
65
Single
3.5
TO-247
D
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mouting hole.
It also provides greater creepage distance between pins to
meet the requirements of most safety specifications.
TO-247
IRFPG40PbF
SiHFPG40-E3
IRFPG40
SiHFPG40
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
EAR
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 50 mH, RG = 25 Ω, IAS = 4.3 A (see fig. 12).
c. ISD 4.3 A, dI/dt 100 A/µs, VDD 600, TJ 150 °C.
d. 1.6 mm from case
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
1000
± 20
4.3
2.7
17
1.2
490
4.3
15
150
1.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Document Number: 91253
S-81368-Rev. A, 21-Jul-08
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SiHFPG40 Datasheet

Power MOSFET

No Preview Available !

IRFPG40, SiHFPG40
Vishay Siliconix
Power MOSFET
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.83
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 1000 V, VGS = 0 V
VDS = 800V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.6 Ab
VDS = 50 V, ID = 2.6 Ab
MIN. TYP. MAX. UNIT
1000
-
2.0
-
-
-
-
33
- -V
1.3 - V/°C
- 4.0 V
- ± 100 nA
- 100
µA
- 500
- 3.5 Ω
- -S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 4.3 A, VDS = 400 V,
see fig. 6 and 13b
VDD = 500 V, ID = 4.3 A ,
RG = 9.1 Ω, RD = 120 Ω, see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
-
-
-
-
-
-
-
-
-
-
-
-
1600
170
56
-
-
-
15
33
100
30
5.0
-
-
-
120
16
65
-
-
-
-
-
13 -
pF
nC
ns
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS MOSFET symbol
showing the
integral reverse
ISM p - n junction diode
D
G
S
- - 4.3
A
- - 17
Body Diode Voltage
VSD
TJ = 25 °C, IS = 4.3 A, VGS = 0 Vb
- - 1.8 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = 4.3 A, dI/dt = 100 A/µsb
-
470 710 ns
Qrr - 1.9 2.9 µC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91253
S-81368-Rev. A, 21-Jul-08


Part Number SiHFPG40
Description Power MOSFET
Maker Vishay
Total Page 8 Pages
PDF Download

SiHFPG40 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 SiHFPG40 Power MOSFET
Vishay





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy