SiHFS9N60A Description
IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET D2PAK (TO-263) GD S D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 0.75 49 13 20 Single.
SiHFS9N60A Key Features
- Low gate charge Qg results in simple drive requirement
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche voltage and current
- Material categorization: for definitions of pliance please see .vishay./doc?99912
- This datasheet provides information about parts that are