Datasheet Summary
.vishay.
Vishay Siliconix
EF Series Power MOSFET With Fast Body Diode
PowerPAK® 8 x 8
4 1
2 3 3
Pin 4: drain
Pin 1: gate
Pin 2: Kelvin connection
Pin 3: source N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) typ. (Ω) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
50 16 8 Single
Features
- 4th generation E series technology
- Low figure-of-merit (FOM) Ron x Qg
- Low effective capacitance (Co(er))
- Reduced switching and conduction losses
- Avalanche energy rated (UIS)
- Kelvin connection for reduced gate noise
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
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