* Low figure-of-merit (FOM) Ron x Qg
* Low input capacitance (Ciss)
* Reduced switching and conduction losses
* Ultra low gate charge (Qg)
* Avalanche energy rated (UIS)
* Material categorization: for definitions of compliance please see www.vishay.com
SiHJ8N60E Datasheet (206.48 KB)
SiHJ8N60E
206.48 KB
E series power mosfet.
www.vishay.com SiHJ8N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. at 25 °C () Qg max. (nC) Qgs (nC).
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