SiHLZ24L Datasheet | Vishay

FEATURES - Surface-mount - Available in tape and reel - Dynamic dv/dt rating - Logic-level gate drive Available - RDS (on) specified at VGS = 4 V and 5 V - 175°C operating temperature Available - Fast switching - Material categorization: for definitions of pliance please see .vishay./doc?99912 Note - This datasheet provides information about parts that are Ro HS-pliant and / or parts that are non Ro HS-pliant. For example, parts with lead (Pb) terminations are not Ro HS-pliant. Please see the information / tables in this datasheet for details DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface-mount power package capable of acmodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface-mount application. The through-hole version (IRLZ24L, Si HLZ24L) is available for low profile application. ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (Pb)-free D2PAK (TO-263) Si HLZ24S-GE3 IRLZ24SPb F I2PAK (TO-262) Si HLZ24L-GE3 IRLZ24LPb F ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VGS at 5 V TC = 25 °C TC = 100 °C Linear derating factor (PCB mount) e Single pulse avalanche energy b Maximum power dissipation Maximum power dissipation (PCB mount) e Peak diode recovery dv/dt c TC = 25 °C TA = 25 °C EAS PD dv/dt Operating junction and storage temperature range Soldering remendations (peak temperature)...