SiHW30N60E Description
SiHW30N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 130 15 39 Single 0.125 TO-247AD D G D S G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free.
SiHW30N60E Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance