SiHW21N80AE Description
SiHW21N80AE Vishay Siliconix E Series Power MOSFET D TO-247AD G D S G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 850 VGS = 10 V 72 9 22 Single 0.205.
SiHW21N80AE Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low effective capacitance (Co(er))
- Reduced switching and conduction losses
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance