* TrenchFET® Gen IV power MOSFET
* Tuned for the lowest RDS-Qoss FOM
* 100 % Rg and UIS tested
* Qgd / Qgs ratio < 1 optimizes switching characteristics
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
SiJA52DP Datasheet (230.85 KB)
SiJA52DP
230.85 KB
N-channel mosfet.
www.vishay.com SiJA52DP Vishay Siliconix N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () Max. 0.0017 at VGS = 10 V 0.0023 at V.
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