Title | N채널 40V 60A(Tc) 27.7W(Tc) 표면 실장 PowerPAK® SO-8 |
Description | www.vishay.com SiJA58DP Vishay Siliconix N-Channel 40 V (D-S) 150 °C MOSFET PowerPAK® SO-8L Single 6.15 mm 1 5.13 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration D 1 2S 3S 4S G Bottom View 40 0.00265 0.00360 23 109 Single FEATURES • TrenchFET® Gen IV power MOSFET • Tuned for the lowest RDS-Qoss FOM • 1... |
Features |
• TrenchFET® Gen IV power MOSFET • Tuned for the lowest RDS-Qoss FOM • 100 % Rg and UIS tested • Qgd/Qgs ratio < 1 optimizes switching characteristics • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D • Synchronous rectification • High power density DC/DC • DC/AC inverters G N-Channel... |
Datasheet |
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