SiJA58DP Description
SiJA58DP Vishay Siliconix N-Channel 40 V (D-S) 150 °C MOSFET PowerPAK® SO-8L Single 6.15 mm 1 5.13 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ.
SiJA58DP Key Features
- TrenchFET® Gen IV power MOSFET
- Tuned for the lowest RDS-Qoss FOM
- 100 % Rg and UIS tested
- Qgd/Qgs ratio < 1 optimizes switching characteristics