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| Description | www.vishay.com SiJH402E Vishay Siliconix N-Channel 40 V (D-S) 175 °C MOSFET PowerPAK® 8 x 8L 8 mm S G 1 Top View S S 7.9 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration D G S1 S2 S3 4 Bottom View 40 0.00065 0.00094 75 450 Single FEATURES • TrenchFET® Gen IV power MOSFET • Fully lead (Pb)-free device • Very low R... |
| Features |
• TrenchFET® Gen IV power MOSFET • Fully lead (Pb)-free device • Very low RDS x Qg figure of merit (FOM) • 50 % smaller footprint than D2PAK (TO-263) • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D • Synchronous rectification • OR-ing • Motor drive control G... |
| Datasheet |
 SiJH402E Datasheet - 229.48KB |
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