SiJH402E Key Features
- TrenchFET® Gen IV power MOSFET
- Fully lead (Pb)-free device
- Very low RDS x Qg figure of merit (FOM)
- 50 % smaller footprint than D2PAK (TO-263)
- 100 % Rg and UIS tested
- Part: SiJH402E
- Manufacturer: Vishay (official site)
- Size: 229.48 KB
Related Vishay Datasheets
| Part Number | Description |
|---|---|
| SiJ188DP | 60V N-Channel MOSFET |
| SiJ4108DP | N-Channel MOSFET |
| SIJ420DP | N-Channel MOSFET |
| SiJ438DP | N-Channel MOSFET |
| SiJ4406DP | N-Channel MOSFET |
SiJH402E Description
SiJH402E Vishay Siliconix N-Channel 40 V (D-S) 175 °C MOSFET PowerPAK® 8 x 8L 8 mm S G 1 Top View S S 7.9 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ.