* TrenchFET® Gen IV power MOSFET
* Fully lead (Pb)-free device
* Very low RDS x Qg figure of merit (FOM)
* 50 % smaller footprint than D2PAK (TO-263)
* 100 % Rg and UIS tested
* Material categorization: for definitions of compliance please see www.vish
SiJH402E Datasheet (229.48 KB)
SiJH402E
229.48 KB
N-channel mosfet.
www.vishay.com SiJH402E Vishay Siliconix N-Channel 40 V (D-S) 175 °C MOSFET PowerPAK® 8 x 8L 8 mm S G 1 Top View S S 7.9 mm PRODUCT SUMMARY VDS.
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