SiJH402E Overview
SiJH402E Vishay Siliconix N-Channel 40 V (D-S) 175 °C MOSFET PowerPAK® 8 x 8L 8 mm S G 1 Top View S S 7.9 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ.
SiJH402E Key Features
- TrenchFET® Gen IV power MOSFET
- Fully lead (Pb)-free device
- Very low RDS x Qg figure of merit (FOM)
- 50 % smaller footprint than D2PAK (TO-263)
- 100 % Rg and UIS tested