SiR4406DP
SiR4406DP is N-Channel MOSFET manufactured by Vishay.
FEATURES
- Trench FET® Gen IV power MOSFET
- 100 ^% Rg and UIS tested
- Qgd / Qgs ratio < 1 optimizes switching characteristics
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Synchronous rectification
- High power density DC/DC
- DC/AC inverters
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
Power PAK SO-8 Si R4406DP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C TA = 25 °C
Pulsed drain current (t = 100 μs) Continuous source-drain diode current Single pulse avalanche current Single pulse avalanche energy
Maximum power dissipation
TA = 70 °C
TC = 25 °C TA = 25 °C
L = 0.1 m H
TC = 25 °C
TC = 70 °C TA = 25 °C
Operating junction and storage temperature range Soldering remendations (peak temperature) d, e
TA = 70 °C
TJ, Tstg
LIMIT...
