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New Product
SiR404DP
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20 RDS(on) (Ω) 0.00160 at VGS = 10 V 0.00175 at VGS = 4.5 V 0.00225 at VGS = 2.5 V ID (A)a 60 60 60 64.5 nC Qg (Typ.)
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • 2.5 V and 3.3 V Gate Drive MOSFET for dc-to-dc Applications • Compliant to RoHS Directive 2002/95/EC
PowerPAK® SO-8
6.15 mm
S 1 2 3 S S
5.