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SiR608DP - N-Channel MOSFET

Key Features

  • TrenchFET® Gen IV power MOSFET.
  • 45 V Drain-source break-down voltage.
  • Tuned for low Qg and Qoss.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiR608DP
Manufacturer Vishay
File Size 243.54 KB
Description N-Channel MOSFET
Datasheet download datasheet SiR608DP Datasheet

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www.vishay.com SiR608DP Vishay Siliconix N-Channel 45 V (D-S) MOSFET PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 5.15 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration 1 2S 3S 4S G Bottom View 45 0.00120 0.00180 50.5 208 Single FEATURES • TrenchFET® Gen IV power MOSFET • 45 V Drain-source break-down voltage • Tuned for low Qg and Qoss • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.