SiR638DP Description
SiR638DP-T1-GE3 (lead (Pb)-free and halogen-free).
SiR638DP Key Features
- TrenchFET® Gen IV power MOSFET
- 100 % Rg and UIS tested
- Qgd / Qgs ratio < 1 optimizes switching
- Material categorization: for definitions of pliance please see .vishay./doc?99912