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SiR638DP Key Features

  • TrenchFET® Gen IV power MOSFET
  • 100 % Rg and UIS tested
  • Qgd / Qgs ratio < 1 optimizes switching
  • Material categorization: for definitions of pliance please see .vishay./doc?99912

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SiR638DP Description

SiR638DP-T1-GE3 (lead (Pb)-free and halogen-free).