SiR608DP Overview
Key Features
- TrenchFET® Gen IV power MOSFET
- 45 V Drain-source break-down voltage
- Tuned for low Qg and Qoss
- 100 % Rg and UIS tested
- Material categorization: for definitions of compliance please see
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |