SiR608DP Description
SiR608DP Vishay Siliconix N-Channel 45 V (D-S) MOSFET PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 5.15 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ.
SiR608DP Key Features
- TrenchFET® Gen IV power MOSFET
- 45 V Drain-source break-down voltage
- Tuned for low Qg and Qoss
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance