SiRA06DDP
SiRA06DDP is N-Channel MOSFET manufactured by Vishay.
FEATURES
- Trench FET® Gen IV power MOSFET
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Synchronous rectification
- High power density DC/DC
- VRMs and embedded DC/DC
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
Power PAK SO-8 Si RA06DDP-T1-UE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
TC = 25 °C
Continuous drain current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 100 μs) Continuous source-drain diode current
TC = 25 °C TA = 25 °C
Single pulse avalanche current Single pulse avalanche energy
Maximum power dissipation
Operating junction and storage temperature range Soldering remendations (peak temperature) d, e
L = 0.1 m H
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
IAS EAS
TJ, Tstg
LIMIT 30
+20, -16 125 a 100 a 36 b, c 29 b, c 240 51 4.2 b, c 29 42 59 36 4.6 b, c 3.0 b,...
