SiRA10DDP - N-Channel 30V MOSFET

Features

TrenchFET® Gen IV power MOSFET.
100 % Rg and UIS tested.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

Datasheet Details

Part number	SiRA10DDP
Manufacturer	Vishay
File Size	247.74 KB
Description	N-Channel 30V MOSFET
Datasheet	SiRA10DDP Datasheet
Additional preview pages of the SiRA10DDP datasheet.

📁 Similar Datasheet

SIR-320ST3F - Infrared light emitting diode (Rohm)
SIR-341ST3F - Infrared light emitting diode (Rohm)
SIR-34ST3F - Infrared light emitting diode (Rohm)
SIR-505STA47 - Infrared light emitting diode (Rohm)
SIR-563ST3F - Infrared light emitting diode (Rohm)
SIR-568ST3 - Infrared light emitting diode (Rohm)
SIR-568ST3F - Infrared light emitting diode (Rohm)
SIR-56ST3 - Infrared light emitting diode (Rohm)
SIR-56ST3F - Infrared light emitting diode (Rohm)
SIR19-315-TR8 - 0603 Package Infrared Chip LED (Everlight Electronics)

Other Datasheets by Vishay

SIRA10DP - N-Channel MOSFET
SiRA12DDP - N-Channel MOSFET
SIRA12DP - N-Channel 30v MOSFET
SiRA14DP - N-Channel 30 V (D-S) MOSFET
SiRA16DP - N-Channel MOSFET
SIRA18ADP - N-Channel MOSFET
SiRA18DDP - N-Channel 30V MOSFET
SIRA18DP - N-Channel 30V MOSFET

Full PDF Text Transcription

Click to expand full text

www.vishay.com SiRA10DDP Vishay Siliconix N-Channel 30 V (D-S) MOSFET PowerPAK® SO-8 Single (Option B) D D8 D7 D6 5 6.10 mm 1 5.15 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 2S 3S 4S G Bottom View 30 0.0031 0.0050 11 96 a Single FEATURES • TrenchFET® Gen IV power MOSFET • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.

Published: Jun 3, 2025 |